OptiMOS 25 V — what the ratings mean for the board
The Infineon BSC009NE2LS5IATMA1 is a 25 V N-channel MOSFET from the OptiMOS series, built for low-voltage high-current switching — think OR-ing diodes, load switches, synchronous rectification in a 12 V bus, or a motor-drive H-bridge where every milliohm costs you copper area and heatsink height. Rds(on) is 0.95 mOhm max at 30 A, 10 V. Power dissipation limits are 2.5 W (Ta) and 74 W (Tc). Gate charge is 49 nC at 10 V. Drive voltage range is 4.5 V to 10 V. Input capacitance is 3200 pF at 12 V drain-source.
Package and rework — the TDSON-8-7 exposed pad
Package is 8-PowerTDFN (PG-TDSON-8-7) with an exposed drain pad.
Temperature grade and environment
Junction temperature range is -55 to 150 °C.
Lifecycle and sourcing
The BSC009NE2LS5IATMA1 is an active, current-production part from Infineon's OptiMOS portfolio. No last-time-buy or end-of-life notice is in effect. ROHS3 compliant.
