0.9 mOhm Rds(on) — the 25°C headline and the hot reality
The Infineon BSC009NE2LS5ATMA1 is an OptiMOS 5 N-channel MOSFET rated for 25 V drain-to-source voltage with a typical on-resistance of 0.9 mOhm at 30 A drain current and 10 V gate drive. That 0.9 mOhm figure is at 25°C junction — at 125°C junction the Rds(on) roughly doubles, so budget 1.8 mOhm for conduction loss calculations under hot operating conditions. The 57 nC total gate charge at 10 V means a 100 kHz switching frequency draws about 5.7 mA average from the gate driver, which is manageable for most half-bridge drivers but the peak current capability still needs checking against the driver's source/sink rating.
Dual current rating: 41 A vs 100 A — the package is the bottleneck
The continuous drain current is listed as 41 A at 25°C ambient (Ta) and 100 A at 25°C case (Tc). That spread tells you the PG-TDSON-8-7 package is the thermal limiter, not the silicon die. Without a heatsink path to the package tab, the 41 A Ta rating is the practical ceiling. The 74 W power dissipation at Tc vs 2.5 W at Ta reinforces the same point — this MOSFET needs a thermal interface to the PCB copper or an external heatsink to run anywhere near its die capability.
Infineon lists the BSC009NE2LS5ATMA1 as Active in production. No end-of-life notice, no last-time-buy deadline. The part is ROHS3 compliant.
Package and footprint: PG-TDSON-8-7
The supplier device package is PG-TDSON-8-7, a surface-mount 8-pin PowerTDFN. The 8-pin pitch and pad layout are standard for this Infineon OptiMOS 5 family, so a layout from a sibling part like the BSC009NE2LS5I should transfer with minor adjustments.