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Infineon Technologies BSC007N04LS6ATMA1
Infineon Technologies

Infineon BSC007N04LS6ATMA1 OptiMOS N-Ch MOSFET, 40V 0.7mOhm

MPNBSC007N04LS6ATMA1
End of Life

Infineon OptiMOS BSC007N04LS6ATMA1, N-Channel MOSFET, 40V Vdss, 0.7mOhm Rds(on) at 10V, 381A Id, PG-TDSON-8-6 package, -55°C to 175°C.

$3.24Ref. price · indicative, final on quote
BSC007N04LS6ATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC007N04LS6ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C381A (Tc)
Power dissipation188W
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs0.7mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs94 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds8400 pF @ 20 V

Product details

What this 40V OptiMOS MOSFET brings to a power stage

The PG-TDSON-8-6 package (8-PowerTDFN) is a surface-mount, thermally enhanced footprint sized for the 188 W maximum power dissipation. Junction temperature spans -55 °C to 175 °C, so it handles under-hood automotive ambient or cramped industrial enclosures without derating headaches.

Gate drive and switching behaviour

Gate charge is 94 nC maximum at 4.5 V Vgs, and the drive voltage range for rated Rds(on) is 4.5 V to 10 V. Input capacitance is 8400 pF at 20 V drain bias.

Sourcing and lifecycle

ROHS3 compliant. For a BOM line that needs a 40 V, sub-milliohm N-channel FET, this is a current-design-eligible choice.

Frequently asked questions

What is the Rds(on) of BSC007N04LS6ATMA1 at Vgs=10V?

Maximum on-resistance is 0.7 mOhm at a drain current of 50 A with 10 V gate drive. That is the figure to use for worst-case conduction loss calculations.

What is the equivalent or replacement for BSC007N04LS6ATMA1?

The peer IPD50R950CEAUMA1 is a 500 V CoolMOS part with 950 mOhm Rds(on) and 4.3 A current rating — it is not a functional replacement. For a 40 V, sub-milliohm N-channel, stay within the OptiMOS 40 V family; no direct second-source is listed in the record.