Infineon OptiMOS BSC007N04LS6ATMA1, N-Channel MOSFET, 40V Vdss, 0.7mOhm Rds(on) at 10V, 381A Id, PG-TDSON-8-6 package, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 381A (Tc) |
| Power dissipation | 188W |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.3V @ 250µA |
| Rds on (Max) @ id, vgs | 0.7mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 94 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 8400 pF @ 20 V |
The PG-TDSON-8-6 package (8-PowerTDFN) is a surface-mount, thermally enhanced footprint sized for the 188 W maximum power dissipation.
Gate charge is 94 nC maximum at 4.5 V Vgs, and the drive voltage range for rated Rds(on) is 4.5 V to 10 V. Input capacitance is 8400 pF at 20 V drain bias.
ROHS3 compliant.
Maximum on-resistance is 0.7 mOhm at a drain current of 50 A with 10 V gate drive. That is the figure to use for worst-case conduction loss calculations.
The peer IPD50R950CEAUMA1 is a 500 V CoolMOS part with 950 mOhm Rds(on) and 4.3 A current rating — it is not a functional replacement. For a 40 V, sub-milliohm N-channel, stay within the OptiMOS 40 V family; no direct second-source is listed in the record.