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Infineon Technologies BSC005N03LS5ATMA1 — Logic ICs
Infineon Technologies

Infineon BSC005N03LS5ATMA1 OptiMOS N-Ch MOSFET, 30V 433A

MPNBSC005N03LS5ATMA1
End of Life

Infineon OptiMOS™ BSC005N03LS5ATMA1, N-Channel MOSFET, 30 V Vdss, 0.55 mOhm Rds(on) @ 50 A / 10 V, 433 A Id @ Tc, PG-TDSON-8 FL, -55°C to 175°C.

$2.54Ref. price · indicative, final on quote
BSC005N03LS5ATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSC005N03LS5ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C42A (Ta), 433A (Tc)
Power dissipation3W (Ta), 188W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs0.55mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs122 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8900 pF @ 15 V

Product details

30 V, 0.55 mOhm — the low-voltage high-current workhorse

The Infineon BSC005N03LS5ATMA1 is an N-channel MOSFET from the OptiMOS™ series, designed for low-voltage, high-current switching applications. The device is rated for a continuous drain current of 433 A at case temperature (Tc), making it suitable for high-power-density designs like synchronous rectification, motor-drive half-bridges, and battery-management disconnect switches.

Gate drive and switching — what the numbers tell you

The BSC005N03LS5ATMA1 specifies a drive voltage range of 4.5 V to 10 V for achieving the rated on-resistance. At 4.5 V gate drive the Rds(on) will be higher than the 0.55 mOhm figure quoted at 10 V — the datasheet curve (not reproduced here) shows the typical ratio. The gate charge (Qg) is 122 nC at 10 V, and the input capacitance (Ciss) is 8900 pF at 15 V Vds. These numbers indicate a moderately large die that requires a gate driver capable of sourcing and sinking several amperes for fast switching. The ±20 V maximum gate-source voltage gives headroom for gate-drive overshoot, but the recommended drive is within the 4.5 V to 10 V window.

Package and thermal — PG-TDSON-8 FL

Housed in an 8-PowerTDFN package, this is a surface-mount, thermally enhanced DFN with an exposed drain pad. The power dissipation is rated.

Frequently asked questions

Does BSC005N03LS5ATMA1 have a datasheet with pinout and electrical specs?

Yes, the BSC005N03LS5ATMA1 has a full Infineon datasheet covering electrical characteristics, pinout, package dimensions, and thermal data. The datasheet is available from the manufacturer or through distribution upon request.