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Infineon Technologies BFR93AWH6327XTSA1 — Memory (DRAM / SRAM / Flash / EEPROM)

BFR93AWH6327XTSA1 NPN RF Transistor, 6 GHz, 12 V, SOT-323

MPNBFR93AWH6327XTSA1
End of Life

Infineon BFR93AWH6327XTSA1 NPN RF transistor, 12 V Vceo, 6 GHz fT, 90 mA Ic, 300 mW, SC-70/SOT-323 package, surface mount.

$0.48Ref. price · indicative, final on quote
PackagingSC-70, SOT-323
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BFR93AWH6327XTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
Transistor typeNPN
Voltage - collector emitter breakdown12V
Current - collector (Ic)90mA
DC current gain (hFE) (Min) @ ic, vce70 @ 30mA, 8V
Power - max300mW
Frequency6GHz
Operating temperature150°C (TJ)
Gain10.5dB ~ 15.5dB
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-70, SOT-323
Noise figure (dB typ @ f)1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Product details

6 GHz NPN RF transistor in SOT-323 — what it is and where it fits

The Infineon BFR93AWH6327XTSA1 is an NPN silicon RF transistor designed for low-noise amplifier and driver stages up to the low-GHz range. Its 6 GHz transition frequency and noise figure of 1.5 dB to 2.6 dB from 900 MHz to 1.8 GHz make it a natural fit for ISM-band receivers, GPS front-ends, and cellular LNA stages. The 12 V collector-emitter breakdown gives headroom for supply rails, while the 90 mA continuous collector current and 300 mW power dissipation suit it for small-signal amplification rather than power output. It comes in the industry-standard SC-70 / SOT-323 footprint, supplied as PG-SOT323.

Package and mounting — SOT-323 logistics

The part is surface-mount in SC-70 / SOT-323, with the Infineon ordering code designating PG-SOT323. The package is small enough for dense RF layouts but still hand-solderable with a fine tip and magnification. Available in Tape & Reel (TR) or Cut Tape (CT) options — the CT variant is convenient for prototype and small-batch builds, while the TR reel suits production pick-and-place. The 150 °C junction temperature rating gives thermal margin for moderate dissipation in a compact board.

Frequently asked questions

Can BFR93AWH6327XTSA1 be used for 2.4 GHz applications?

Yes. The 6 GHz transition frequency and noise figure of 1.5 dB to 2.6 dB are well within the requirements for 2.4 GHz ISM-band LNA and driver stages. The 12 V breakdown provides ample headroom for 3.3 V or 5 V supplies common in Wi-Fi and Bluetooth front-ends.

Where can I buy BFR93AWH6327XTSA1 in small quantities?

This part is available through independent distribution and is sourced to order. For small quantities, the Cut Tape (CT) packaging option is typically the most economical. Submit an RFQ for current pricing and availability — lead time and stock are confirmed at quote time.

What is the pinout of BFR93AWH6327XTSA1 SOT-323?

The SOT-323 (SC-70) package has three pins: pin 1 is the base, pin 2 is the emitter, and pin 3 is the collector. This is the standard pinout for an NPN RF transistor in this footprint. The PG-SOT323 designation is Infineon's ordering code for the same physical package.