RF transistor for low-noise front-ends through C-band
The Infineon BFR750L3RHE6327 is an NPN silicon RF bipolar transistor designed for small-signal amplification up into C-band. Its 37 GHz transition frequency and 21 dB gain make it a candidate for LNA stages in base station receivers, satellite downconverters, and test equipment front-ends. The noise figure runs 0.6 dB to 1.1 dB across 1.8 GHz to 6 GHz, which keeps the system noise floor low in the first gain stage.
Package and mounting — board-area fit
Housed in the PG-TSLP-3 package, which is the Infineon designation for a 3-pin leadless plastic package — essentially a SOT-883 footprint. Surface-mount, no through-hole option. The tiny body saves board space in dense RF modules, but the exposed pad (if present) needs a thermal via to the ground plane to keep junction temperature under the 150 °C (TJ) maximum. Store the reels dry — moisture-sensitive level is typical for this package class.
DC bias and safe operating area
Collector current is rated to 90 mA, collector-emitter breakdown at 4.7 V. That 4.7 V ceiling means this transistor is intended for low-voltage RF stages.
Lifecycle and sourcing
Status is Active — no end-of-life notice, no last-time-buy pressure. Infineon continues to manufacture this part through its standard RF product line. No official second-source or pin-compatible replacement is listed in the Infineon cross-reference, so dual-sourcing would require a design-in of a functionally equivalent RF transistor from another vendor.