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Infineon Technologies BFP840FESDH6327XTSA1 — Analog & Data Acquisition
Infineon Technologies

Infineon BFP840FESDH6327XTSA1 RF NPN Transistor, 85GHz

MPNBFP840FESDH6327XTSA1
End of Life

Infineon BFP840FESDH6327XTSA1 NPN RF transistor, 85GHz transition frequency, 35dB gain, 0.75dB noise figure @ 5.5GHz, 2.6V Vce, 35mA Ic, 75mW max power, PG-TSFP-4-1 package, surface mount, 150°C junction temperature.

$0.51Ref. price · indicative, final on quote
BFP840FESDH6327XTSA1 datasheet
Packaging4-SMD, Flat Leads
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BFP840FESDH6327XTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN
Voltage - collector emitter breakdown2.6V
Current - collector (Ic)35mA
DC current gain (hFE) (Min) @ ic, vce150 @ 10mA, 1.8V
Power - max75mW
Frequency85GHz
Operating temperature150°C (TJ)
Gain35dB
PackageTape & Reel (TR); Cut Tape (CT)
Case4-SMD, Flat Leads
Noise figure (dB typ @ f)0.75dB @ 5.5GHz

Product details

RF transistor for low-noise, high-gain front-ends

The BFP840FESDH6327XTSA1: NPN RF bipolar transistor in a PG-TSFP-4-1 package. Transition frequency of 85GHz and typical gain of 35dB.

Package and mounting for RF layout

The PG-TSFP-4-1 package is a 4-lead flat-lead SMD with a small footprint — the leads are coplanar with the body, which minimizes parasitic inductance and supports repeatable RF performance up to several tens of gigahertz. Surface-mount assembly is standard; the flat leads require a solder paste stencil aperture sized to the pad geometry in the Infineon application note. The device is rated for a junction temperature of 150°C, so thermal management is straightforward at the 75mW maximum power dissipation.

Lifecycle and compliance

It is ROHS3 compliant, which covers the current EU RoHS exemption list.

Frequently asked questions

Will BFP840FESDH6327XTSA1 drop into a board designed for BFP640FH6327XTSA1?

Both parts share the same PG-TSFP-4-1 package footprint and are NPN SiGe transistors, but the BFP840FESDH6327XTSA1 has a higher gain (35dB vs 23dB) and a higher transition frequency (85GHz vs 40GHz). The bias network and matching may need adjustment due to different S-parameters; a direct drop-in without circuit re-tuning is not guaranteed.