Infineon BFP740FESDH6327 — 47 GHz NPN RF transistor for X-band and 5G front-ends
Noise figure runs from 0.5 dB at 150 MHz to 1.45 dB at 10 GHz. The 4.2 V collector-emitter breakdown and 45 mA maximum collector current set a low-voltage bias point. DC current gain (hFE) is a minimum of 160 at 25 mA, 3 V. The 4-TSFP package keeps parasitic inductance low and suits automated pick-and-place assembly.
47 GHz fT — what it means for the LNA design
A 47 GHz transition frequency means the transistor delivers useful gain into the microwave region. The part is rated for operation through 10 GHz based on the noise-figure test points. The 160 mW maximum power dissipation is a board-level constraint. Junction temperature is rated to 150 °C.
Sourcing and lifecycle
No last-time-buy or end-of-life notices are on record for this order code.
Package and mounting
For high-volume pick-and-place, verify that the feeder system can handle loose parts, or request the tape-and-reel variant if available under a different suffix.