X-band low-noise transistor in 4-TSFP
The Infineon BFP720FH6327 is an NPN silicon-germanium RF transistor designed for low-noise amplification through X-band and into Ku-band. It delivers a 1 dB typical noise figure at 10 GHz and a 45 GHz transition frequency, making it a candidate for receiver front-ends, LNB downconverters, and small-signal gain stages where noise floor is the binding constraint.
Gain and noise — the receiver front-end specs
The 15 dB gain at the operating bias point provides enough headroom to overcome mixer noise in a typical superheterodyne receive chain. The 1 dB noise figure at 10 GHz keeps the system noise figure within 0.2 dB of the LNA alone, assuming a low-loss input match. Collector current is capped at 25 mA maximum, with a 4.7 V collector-emitter breakdown. The 100 mW power dissipation limit in the 4-TSFP package means the bias point must be set well below these ceilings — a typical LNA bias is 13 mA at 3 V, where the DC current gain is 160 minimum.