45 GHz NPN RF transistor for low-noise front ends
The Infineon BFP720FE6327 is an NPN silicon-germanium RF transistor designed for low-noise amplification from 150 MHz through X-band. Its 45 GHz transition frequency and noise figure as low as 0.4 dB up to 10 GHz make it a fit for LNA stages in base station receivers, satellite downconverters, and microwave backhaul links. The 4.7 V collector-emitter breakdown and 25 mA maximum collector current mean this part is biased for low-voltage, low-current signal paths — not power stages. Housed in a 4-TSFP flat-lead SMD package, it suits compact RF module layouts where parasitic inductance must be minimised.
Gain and noise — what the numbers mean for the LNA budget
The 10.5 dB to 28 dB gain range is bias-dependent: at a given collector current the part delivers a specific gain, and the designer trades gain against noise figure and linearity. At 13 mA and 3 Vce the DC current gain minimum is 160, which gives a usable beta for bias network design. The 0.4 dB noise figure at lower frequencies means this transistor can sit ahead of the first mixer without degrading system sensitivity — critical for sub-1 dB NF receiver chains. Above 10 GHz the noise figure rises to 1 dB, still competitive for Ku-band LNBs.
Lifecycle and sourcing posture
The BFP720FE6327 product status is Active.