65 GHz SiGe:C NPN for L-band through C-band front-ends
The Infineon BFP620FH7764XTSA1 is an NPN silicon-germanium carbon (SiGe:C) RF bipolar transistor designed for low-noise amplification and oscillator stages through 6 GHz and beyond. Its 65 GHz transition frequency and noise figure of 0.7 dB at 1.8 GHz make it a strong candidate for LNA and driver stages in cellular infrastructure, satellite receivers, and microwave backhaul radios. The 2.8 V collector-emitter breakdown and 80 mA maximum collector current suit it for low-voltage, moderate-current RF paths, typically in the first or second gain stage after the antenna filter.
The noise figure is specified as 0.7 dB to 1.3 dB across 1.8 GHz to 6 GHz, meaning the part adds less than 1 dB of noise in the L-band and lower C-band — critical for preserving signal-to-noise ratio in a sensitive receiver. Gain drops from 21 dB at lower frequencies to 10 dB at the upper end of the range, which is typical for a single-stage transistor; plan for two stages or an external gain block if the system needs more than 10 dB at 6 GHz.
Package and assembly — 4-TSFP with flat leads
The part comes in a 4-SMD flat-lead package with the supplier device package designated 4-TSFP. The flat leads are solderable by standard reflow; the small footprint suits dense RF module layouts. No exposed thermal pad, so heat dissipation relies on the collector lead and board copper; the 185 mW maximum power is the thermal ceiling to observe in layout.