45 GHz SiGe:C NPN for LNA and driver stages
The Infineon BFP520H6327XTSA1 is a silicon-germanium carbon (SiGe:C) NPN RF bipolar transistor in a SOT-343 package. It delivers 22.5 dB gain with a noise figure of 0.95 dB at 1.8 GHz, making it a strong candidate for low-noise amplifier front-ends in cellular infrastructure, GPS receivers, and ISM-band radios. The 45 GHz transition frequency keeps gain flat well into Ku-band, so it also works in satellite down-converters and point-to-point radio driver stages.
3.5 V Vceo — design the rail first
Collector-emitter breakdown is 3.5 V maximum. The 40 mA collector current limit suits low-to-medium power stages.
