100 V, 3 A PNP in SOT-223 — the medium-power workhorse
The Infineon BDP954H6327XTSA1 is a PNP bipolar power transistor rated for 100 V collector-emitter breakdown and 3 A continuous collector current, housed in a surface-mount SOT-223 package (PG-SOT223-4). It dissipates up to 5 W, switches with a 100 MHz transition frequency, and saturates at 500 mV max at 2 A. The minimum DC current gain of 85 at 500 mA / 1 V gives useful beta at a realistic operating point. This part suits medium-voltage linear regulators, load switches, and moderate-speed power switching in industrial and automotive-adjacent environments — the 150°C junction rating covers high-ambient or poorly-ventilated enclosures.
The 100 V VCEO gives roughly 2× headroom on a 48 V rail or comfortable margin on a 60 V bus — you are not pushing the breakdown edge. The 3 A Ic rating means this PNP can handle moderate loads like a solenoid, a small DC motor, or a pre-regulator pass device, but the 5 W package dissipation is the real limiter: at 3 A the saturation voltage alone eats 1.5 W (500 mV × 3 A), leaving only 3.5 W for the VCE × IC product in linear mode. In practice, for continuous linear operation above about 1.5 A you will need the SOT-223's thermal pad soldered to a decent copper pour — the junction-to-ambient thermal resistance of a SOT-223 on a standard footprint is around 60–80°C/W, so 5 W would push the junction above 150°C at 25°C ambient. For switching applications the 100 MHz fT handles a few hundred kHz comfortably; for higher frequencies look at a faster PNP or a MOSFET.
RoHS compliance is standard for Infineon's H6327 suffix (green, halogen-free).