PNP pre-biased transistor with built-in resistors
The Infineon BCR573E6433HTMA1 is a PNP pre-biased transistor in a SOT-23-3 package. It integrates two bias resistors — R1 of 1 kOhm between base and emitter, and R2 of 10 kOhm between base and the bias node — eliminating the need for external resistor pairs in switching and driver circuits. This saves board space and reduces component count in applications like relay drivers, lamp drivers, and logic-level interface stages.
500 mA collector current and 50 V breakdown
The transistor is rated for a maximum collector current of 500 mA and a collector-emitter breakdown voltage of 50 V. The DC current gain (hFE) is a minimum of 70 at 50 mA and 5 V, and the saturation voltage (Vce(sat)) is 300 mV at 2.5 mA base current and 50 mA collector current. These ratings suit it for medium-current switching in 12 V and 24 V industrial and automotive auxiliary circuits.
150 MHz transition frequency
With a transition frequency of 150 MHz, the BCR573E6433HTMA1 can handle moderate-speed switching up to several megahertz. The built-in resistors limit base drive, so the actual switching speed depends on the external drive voltage and load capacitance — but for typical relay or LED switching below 1 MHz, the 150 MHz fT provides ample margin.
Last Buy — plan your final procurement
This part carries a Last Buy lifecycle status. That means Infineon has announced the end of production, and the final ordering window is open now. If your BOM depends on the BCR573E6433HTMA1, secure your lifetime buy quantity or qualify a replacement before the window closes.