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Infineon Technologies BCR573E6327 — Discrete Semiconductors

BCR573E6327 PNP Pre-Biased Transistor, 500 mA, 50 V

MPNBCR573E6327
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Infineon BCR573E6327 PNP pre-biased transistor, AEC-Q101 automotive grade, 500 mA collector current, 50 V Vce, 150 MHz transition frequency, SOT-23-3 surface-mount package.

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Specifications

BCR573E6327 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max330 mW
Frequency150 MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)1 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 2.5mA, 50mA

Product details

Automotive-grade pre-biased PNP for medium-current switching

The Infineon BCR573E6327 is a PNP pre-biased transistor in the SOT-23-3 package, qualified to AEC-Q101. It integrates a bias resistor network — 1 kΩ base resistor (R1) and 10 kΩ base-emitter resistor (R2). Collector current is rated to 500 mA continuous, with a collector-emitter breakdown of 50 V.

The 500 mA collector current ceiling and 50 V Vce breakdown cover the majority of automotive solenoid and relay coil loads. At 300 mV Vce(sat) with 2.5 mA base drive and 50 mA collector current, the saturation voltage stays low enough to keep dissipation manageable in a SOT-23-3 footprint. Transition frequency of 150 MHz is more than adequate for PWM switching up to several hundred kilohertz. Power dissipation is rated at 330 mW for the SOT-23-3 package.

Lifecycle and sourcing

It is a current-production part from Infineon, available through independent distribution.

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