Dual pre-biased NPN in a compact SC-74
The Infineon BCR523UE6433HTMA1 integrates two NPN pre-biased transistors in a single SC-74 (SOT-457) surface-mount package. Each transistor includes a 1 kΩ base resistor (R1) and a 10 kΩ base-emitter resistor (R2), eliminating the need for external bias components in low-side switching and driver applications. The device is rated for a collector-emitter breakdown voltage of 50 V and a continuous collector current of 500 mA, with a maximum power dissipation of 330 mW.
NRND — plan for a last-time buy or alternate
This means the part is still available for existing production but is not intended for new design-ins. Buyers should evaluate a last-time-buy window or qualify a pin-compatible alternative from the BCR523 family for ongoing builds.
Switching performance and saturation
With a transition frequency of 100 MHz and a Vce saturation of 300 mV at 2.5 mA base current and 50 mA collector current, this dual transistor is suited for medium-speed switching up to several megahertz. The minimum DC current gain of 70 at 50 mA, 5 V ensures consistent drive capability across the operating range.