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Infineon Technologies BCR523E6327HTSA1 — Discrete Semiconductors

Infineon BCR523E6327HTSA1 NPN Pre-Biased Transistor, 500 mA

MPNBCR523E6327HTSA1
Last Buy

Infineon BCR523E6327HTSA1 NPN pre-biased transistor, 500 mA collector current, 50 V Vce, 100 MHz transition frequency, SOT-23-3 package.

$0.3800Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR523E6327HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 50mA, 5V
Power - max330 mW
Frequency100 MHz
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)1 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 2.5mA, 50mA

Product details

Last Buy — plan your final order

The BCR523E6327HTSA1 carries a Last Buy lifecycle status. This is the final production window — once stock clears, the part will not be manufactured again. If this transistor is on your BOM, now is the time to secure lifetime buy quantities or qualify a replacement.

Pre-biased NPN in SOT-23-3 — what the ratings mean

This is an NPN pre-biased transistor with integrated bias resistors: 1 kΩ base (R1) and 10 kΩ emitter-base (R2). The built-in resistor network eliminates two external passives per transistor, shrinking board area and reducing pick-and-place cost. Collector current is rated 500 mA continuous, with a collector-emitter breakdown of 50 V — suitable for low-side switching in 12 V and 24 V industrial loads, relay drivers, and logic-level interface circuits. Transition frequency of 100 MHz is adequate for PWM switching up to several megahertz.

330 mW power dissipation — thermal budget in a small package

Maximum power dissipation is 330 mW. In a SOT-23-3, that limits continuous collector current at higher ambient temperatures. For a 50 mA load at 5 V Vce, dissipation is about 250 mW — within the limit at 25 °C ambient, but derating above 85 °C requires checking the thermal curve. If your design runs the transistor near 500 mA with significant Vce, plan for a larger package or parallel devices.

Frequently asked questions

Is BCR523E6327HTSA1 obsolete?

The BCR523E6327HTSA1 is not yet obsolete but is in a Last Buy phase. Production is ending — final orders should be placed now to avoid a shortage.

What is the closest pin-compatible alternative to BCR523E6327HTSA1?

The base product number BCR523 covers the same die in different packaging or reel options. For a direct functional replacement, look at other Infineon pre-biased NPN transistors in SOT-23-3 with similar R1/R2 values (1 kΩ / 10 kΩ) and 500 mA / 50 V ratings — for example, the BCR523 series variants. Verify pinout and bias resistor values against your design before substituting.