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Infineon Technologies BCR512E6327HTSA1 — Discrete Semiconductors
Infineon Technologies

Infineon BCR512E6327HTSA1 NPN Pre-Biased Transistor

MPNBCR512E6327HTSA1
Last Buy

Infineon BCR512E6327HTSA1 NPN pre-biased transistor, 50 V VCEO, 500 mA Ic, 100 MHz fT, built-in 4.7 kΩ bias resistors, PG-SOT23 package, 330 mW power dissipation.

$0.3800Ref. price · indicative, final on quote
BCR512E6327HTSA1 datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

BCR512E6327HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce60 @ 50mA, 5V
Power - max330 mW
Frequency100 MHz
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 2.5mA, 50mA

Product details

Last Buy notice — sourcing window closing

The BCR512E6327HTSA1 carries a Last Buy lifecycle status from Infineon, meaning the manufacturer has scheduled its end of production. Buyers should secure final-order quantities and evaluate a replacement before the order cutoff passes.

NPN pre-biased transistor — 50 V, 500 mA, built-in resistors

The BCR512E6327HTSA1 is an NPN pre-biased transistor in a PG-SOT23 surface-mount package. It integrates two 4.7 kΩ resistors — one in series with the base (R1) and one between base and emitter (R2) — eliminating two external passives from the BOM. The collector-emitter breakdown voltage is 50 V, and the continuous collector current rating is 500 mA, making it suitable for low-side switching, relay and solenoid drivers, and logic-level interface circuits in 5 V and 3.3 V systems. The 100 MHz transition frequency supports moderate-speed switching applications up to several megahertz.

Saturation and gain — design margin

VCE(sat) is specified at 300 mV maximum with a 2.5 mA base drive and 50 mA collector current — a typical forced-beta of 20, which keeps the transistor in hard saturation. The minimum DC current gain (hFE) is 60 at 50 mA, 5 V. Collector cutoff current is 100 nA maximum, adequate for battery-operated circuits where off-state leakage matters.

Package and power handling

Supplied in the PG-SOT23 package (equivalent to SOT-23-3), the part dissipates up to 330 mW. Surface-mount assembly with standard reflow profiles; the small footprint suits dense PCB layouts in industrial controls, consumer electronics, and telecom modules.

Frequently asked questions

Is BCR512E6327HTSA1 still active or obsolete?

The BCR512E6327HTSA1 is in Last Buy status per Infineon's product lifecycle. It is not yet obsolete, but the manufacturer has announced end-of-production — final orders should be placed promptly.

What is the replacement for BCR512E6327HTSA1?

Infineon has not published an official replacement part number in the available records. For a pin-compatible substitute, consider other NPN pre-biased transistors in the BCR512 family with the same SOT-23 footprint and 4.7 kΩ bias resistors, but verify specifications and lifecycle status independently.