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Infineon Technologies BCR503E6393HTSA1 — Discrete Semiconductors

Infineon BCR503E6393HTSA1 NPN Pre-Biased Transistor

MPNBCR503E6393HTSA1
Obsolete

Infineon BCR503E6393HTSA1 NPN pre-biased transistor, 50 V collector-emitter breakdown, 500 mA collector current, 100 MHz transition frequency, 2.2 kOhm base and emitter-base resistors, PG-SOT23 package, 330 mW power dissipation.

$0.4400Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR503E6393HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce40 @ 50mA, 5V
Power - max330 mW
Frequency100 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)2.2 kOhms
Vce saturation (Max) @ ib, ic300mV @ 2.5mA, 50mA

Product details

Pre-biased NPN for switching — what the ratings tell you

The Infineon BCR503E6393HTSA1 is an NPN pre-biased transistor in a PG-SOT23 package, integrating two 2.2 kOhm resistors (R1 base, R2 emitter-base) so you can drive it directly from a logic output without external bias components. With a 50 V collector-emitter breakdown and 500 mA maximum collector current, it handles low-side switching loads like relays, solenoids, and indicator LEDs in 5 V to 24 V systems. The 100 MHz transition frequency is fine for PWM up to a few hundred kilohertz; the 330 mW power limit means you'll want to check junction temperature if switching more than about 150 mA continuous at room ambient.

Sourcing a discontinued part

This part carries an Obsolete product status. It is no longer manufactured by Infineon and has no official successor listed in the lifecycle record. If you're qualifying a new design, look at current Infineon pre-biased NPN families in SOT-23; the 2.2 kOhm / 2.2 kOhm resistor divider is a common bias configuration, so a parametric search on that ratio plus 500 mA Ic and 50 V Vce will turn up active alternatives.

Rework note: SOT-23 is friendly

The PG-SOT23 package (TO-236-3 / SC-59 equivalent) is about as rework-friendly as a three-lead part gets. Low thermal mass means it lifts clean with hot air at 300°C for a few seconds — no preheat needed. Will it survive the hot air? Yes, easily. Just don't cook it past 260°C for more than ten seconds or you risk shifting the bias resistors' values.

Frequently asked questions

Where can I buy BCR503E6393HTSA1?

Submit an RFQ for current availability and pricing — each quote is confirmed at order time against our multi-source supply network.

What is the replacement for BCR503E6393HTSA1?

No official successor is listed. For new designs, search for current Infineon or equivalent pre-biased NPN transistors in SOT-23 with 2.2 kOhm base and emitter-base resistors, 500 mA Ic, and 50 V Vce.

What are the specifications of BCR503E6393HTSA1?

It is an NPN pre-biased transistor with 50 V Vce breakdown, 500 mA Ic max, 100 MHz ft, 330 mW power dissipation, 2.2 kOhm base and emitter-base resistors, and 300 mV Vce saturation at 2.5 mA base / 50 mA collector. Packaged in PG-SOT23 (TO-236-3 / SC-59).