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Infineon Technologies BCR48PNE6433BTMA1 — Discrete Semiconductors

BCR48PNE6433BTMA1 Infineon Dual Pre-Biased Transistor, 50V

MPNBCR48PNE6433BTMA1
Obsolete

Infineon BCR48PNE6433BTMA1, dual pre-biased transistor, 1 NPN + 1 PNP, 50V VCEO, 70/100mA Ic, 250mW, SOT-363, Tape & Reel.

StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR48PNE6433BTMA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)70mA, 100mA
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250mW
Frequency100MHz, 200MHz
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)47kOhms, 2.2kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Dual pre-biased pair in a SOT-363 footprint

The Infineon BCR48PNE6433BTMA1 integrates one NPN and one PNP pre-biased transistor in a single 6-pin PG-SOT363-PO package. Each transistor includes built-in bias resistors — 47 kΩ base (R1) on both sides, plus a 47 kΩ emitter-base resistor (R2) on the NPN — so you save board space and eliminate up to four external resistors per channel. This is a common building block for low-power switching, level shifting, and driver stages where the load current stays under 70 mA (NPN) or 100 mA (PNP) and the collector-emitter voltage never exceeds 50 V.

Obsolete — what that means for procurement

Infineon lists the BCR48PNE6433BTMA1 as obsolete. The only supply path is the surplus and independent distribution market — sealed factory reels, mixed date-code lots, or customer inventory resale. For a BOM line that depends on this exact order code, the procurement decision is straightforward: qualify a surplus lot against the original spec and order what the market holds, or plan a redesign around a current-production equivalent.

Key ratings — what they mean for fit

The 50 V collector-emitter breakdown sets the rail voltage ceiling. The 250 mW package dissipation limits continuous current; at 5 V rail and 70 mA on the NPN side, derating is necessary. The 300 mV saturation at 500 µA base / 10 mA collector is typical for a pre-biased part. The 100 MHz / 200 MHz transition frequencies are adequate for switching up to a few megahertz.

Frequently asked questions

Where can I buy BCR48PNE6433BTMA1?

Submit an RFQ for current availability and pricing — we confirm both at quote time from our surplus and broker network.

Is BCR48PNE6433BTMA1 obsolete?

Yes, Infineon lists the BCR48PNE6433BTMA1 as obsolete. No further production runs or last-time-buy windows are available.

What is the replacement for BCR48PNE6433BTMA1?

Infineon has not published an official successor order code for this part. A redesign would need to target a current-production dual pre-biased transistor in SOT-363 — for example, the BCR48PN series from Infineon or a pin-compatible alternative from Nexperia or ROHM. Verify the bias resistor values and pinout against the original before specifying.

What are the specifications of BCR48PN?

The BCR48PN base part is a dual pre-biased transistor with one NPN and one PNP in a SOT-363 package. Key ratings: 50 V VCEO, 70 mA (NPN) and 100 mA (PNP) collector current, 250 mW total power dissipation, 300 mV saturation at 500 µA base / 10 mA collector, and transition frequencies of 100 MHz (NPN) and 200 MHz (PNP). Bias resistors are 47 kΩ base and 47 kΩ emitter-base on the NPN; the PNP has a 2.2 kΩ base resistor.