Dual pre-biased pair for compact switching
The Infineon BCR48PNE6327BTSA1 packs one NPN and one PNP pre-biased transistor into a single 6-VSSOP / SOT-363 package, saving board area and component count where you need complementary switching without external base resistors. Each transistor integrates its own bias network — the NPN side uses 47 kΩ for both R1 and R2, while the PNP side uses 2.2 kΩ for R1 and 47 kΩ for R2 — so the device turns on and off with a logic-level drive signal, no extra passives. Collector current is rated 70 mA for the NPN and 100 mA for the PNP, with a 50 V collector-emitter breakdown. Maximum power dissipation is 250 mW for the combined die.
Infineon lists the BCR48PNE6327BTSA1 as obsolete. No factory orders are accepted; the only supply path is the surplus and broker market. When you source through independent distribution, every reel should be date-code and lot traced, and the laser etch on the SOT-363 package cross-checked against Infineon's marking specification — gray-market stock of obsolete parts is a common counterfeit vector.
Switching performance and saturation
The NPN side transitions at 100 MHz, the PNP at 200 MHz — adequate for general-purpose switching up to low-MHz rates. Minimum DC current gain is 70 at 5 mA collector current and 5 V Vce. Saturation voltage is 300 mV maximum at 500 µA base current and 10 mA collector current, which keeps conduction losses low in logic-level loads like relay coils, LED indicators, or small solenoid drivers.