What this dual pre-biased transistor does in your circuit
The Infineon BCR35PNE6433HTMA1 is a dual pre-biased transistor array integrating one NPN and one PNP transistor with built-in bias resistors in a single PG-SOT363-PO package. Each transistor has a base resistor (R1) of 10kΩ and a base-emitter resistor (R2) of 47kΩ, eliminating the need for external bias components and saving board space in switching and driver applications.
The BCR35PNE6433HTMA1 is marked obsolete by Infineon. No official replacement part number is listed by Infineon for this specific dual pre-biased transistor variant.
The 50V VCEO breakdown voltage suits low-to-medium voltage switching up to 48V rails. The 100mA collector current rating covers typical load-driver and logic-level interface roles. The 150MHz transition frequency is adequate for switching applications up to a few MHz. The integrated 10kΩ base resistor and 47kΩ base-emitter resistor set the on-state base drive and off-state leakage path, so the part's switching threshold is fixed — verify it matches your input voltage swing. The 250mW total power dissipation limits continuous current at elevated ambient temperatures; derate for your operating conditions.