The Infineon BCR35PNE6327BTSA1 is a dual pre-biased transistor array integrating one NPN and one PNP transistor in a single PG-SOT363-PO package. Each transistor includes integrated bias resistors — 10 kΩ base (R1) and 47 kΩ emitter-base (R2) — eliminating the need for external resistors in switching and driver circuits. With a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, it suits low-power load switching, relay drivers, and logic-level interface stages in industrial and consumer electronics. The 150 MHz transition frequency supports moderate-speed switching applications.
Obsolete — sourcing through independent distribution
Infineon lists the BCR35PNE6327BTSA1 as obsolete.
Key ratings for BOM fit
The 50 V VCEO and 100 mA Ic ceiling define the load budget — adequate for 24 V industrial logic or 12 V automotive auxiliary loads, but not for higher-power drivers. The 300 mV Vce(sat) at 500 µA base / 10 mA collector gives a low on-state voltage drop for saturated switching. Minimum DC current gain of 70 at 5 mA / 5 V ensures consistent drive capability across the operating range. Maximum power dissipation of 250 mW limits continuous current in free-air; thermal derating applies above 25 °C ambient.