BCR22PNH6327XTSA1

Infineon Technologies

Infineon BCR22PNH6327XTSA1 dual pre-biased transistor, 1 NPN + 1 PNP, 50V Vce, 100mA Ic, 22kOhm R1 and R2, 130MHz fT, 250mW, PG-SOT363-PO package, Tape & Reel.

BCR22PNH6327XTSA1
[IN STOCK] In Stock: 87 pcs
$1.17/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BCR22PNH6327XTSA1 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce50 @ 5mA, 5V
Power - max250mW
Frequency - transition130MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)22kOhms
Resistor - emitter base (R2)22kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Technical details

Dual pre-biased pair in a SOT-363

The Infineon BCR22PNH6327XTSA1 packs one NPN and one PNP pre-biased transistor into a single PG-SOT363-PO package — a space-saving alternative to two discrete bias-resistor networks for switching and driver stages where board area is tight. Both the base resistor (R1) and the base-emitter resistor (R2) are 22kOhms, giving a symmetrical input impedance that simplifies design-in for logic-level interface or relay/load driver circuits.

For existing production, you can still source it through independent distribution against an RFQ, but new designs should look at the current Infineon dual pre-biased transistor portfolio for a pin-compatible alternative.

BCR22PNH6327XTSA1
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