Dual pre-biased transistor — what it replaces on the board
The Infineon BCR22PNE6327BTSA1 integrates one NPN and one PNP transistor, each with 22 kΩ base and emitter-base resistors, in a single SOT-363 package. This eliminates two external resistor pairs and two discrete transistors, saving board area in switching and level-shifting circuits where the 50 V collector-emitter breakdown and 100 mA collector current rating cover typical relay, solenoid, and logic-level interface loads.
Saturation and gain — where the margin lives
Vce(sat) is specified at 300 mV maximum with 500 µA base drive and 10 mA collector current, which keeps conduction losses low in saturated switching. Minimum DC current gain of 50 at 5 mA, 5 V ensures consistent drive capability across temperature. The 130 MHz transition frequency is adequate for low-frequency PWM and signal conditioning up to a few megahertz.
Obsolete — sourcing through independent distribution
Infineon lists the BCR22PNE6327BTSA1 as obsolete. For BOM lines that require this exact dual pre-biased transistor, supply is limited to surplus and broker-channel inventory.