Infineon BCR22PNE6327BTSA1, dual NPN/PNP pre-biased transistor, 50V Vce, 100mA Ic, 130MHz ft, 22kΩ base/emitter resistors, 250mW, SOT-363, Tape & Reel.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Voltage - collector emitter breakdown | 50V |
| Current - collector (Ic) | 100mA |
| DC current gain (hFE) (Min) @ ic, vce | 50 @ 5mA, 5V |
| Power - max | 250mW |
| Frequency - transition | 130MHz |
| Package | Tape & Reel (TR) |
| Case | 6-VSSOP, SC-88, SOT-363 |
| Resistor - base (R1) | 22kOhms |
| Resistor - emitter base (R2) | 22kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 500µA, 10mA |
The Infineon BCR22PNE6327BTSA1 integrates one NPN and one PNP transistor, each with 22 kΩ base and emitter-base resistors, in a single SOT-363 package.
The 130 MHz transition frequency is adequate for low-frequency PWM and signal conditioning up to a few megahertz.
Infineon lists the BCR22PNE6327BTSA1 as obsolete.
Submit an RFQ; we confirm availability and current pricing at quote time.
No official replacement order code is recorded for this part. A functionally equivalent dual pre-biased transistor in SOT-363 with 22 kΩ resistors and 50 V / 100 mA ratings would need to be verified for pin compatibility and bias resistor values.