Infineon BCR198TE6327 PNP pre-biased transistor, Automotive AEC-Q101, 50 V Vce, 100 mA Ic, 190 MHz ft, 47 kOhm integrated resistors, SOT-23-3 package.
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101 |
| Mounting | Surface Mount |
| FET type | PNP - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 70 @ 5mA, 5V |
| Power - max | 200 mW |
| Frequency - transition | 190 MHz |
| Package | Bulk |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Resistor - base (R1) | 47 kOhms |
| Resistor - emitter base (R2) | 47 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 500µA, 10mA |
The integrated 47 kOhm base resistor (R1) and 47 kOhm emitter-base resistor (R2) eliminate two external components per transistor, saving board space and reducing pick-and-place cost.
Housed in the PG-SOT23-3-3 package (TO-236-3 / SC-59 / SOT-23-3 variant), the BCR198TE6327 uses the standard three-lead SOT-23 footprint. The 200 mW power dissipation limit sets the thermal budget.
For a direct replacement, confirm the bias resistor values (both 47 kOhm) and the SOT-23-3 footprint match your BOM.