The Infineon BCR198SH6827XTSA1 is a dual PNP pre-biased transistor pair in a PG-SOT363-PO surface-mount package. Each transistor integrates a 47kΩ base resistor (R1) and a 47kΩ emitter-base resistor (R2), eliminating two external resistors per channel and saving board area in low-power switching and interface circuits. Rated for a collector-emitter breakdown of 50V and a continuous collector current of 100mA, with a power dissipation ceiling of 250mW, it suits logic-level load drivers, relay and solenoid pre-drivers, and general-purpose inverter stages where a clean on/off switch is needed without biasing network design.
190MHz transition frequency — switching speed for the application
With a transition frequency of 190MHz, this dual transistor can handle moderate-speed switching up to several megahertz, adequate for PWM pre-drive, level translation, and signal inversion in industrial control and consumer electronics. The pre-biased resistors set a fixed base drive — the 47kΩ R1 limits base current, while the 47kΩ R2 ensures a defined off-state — so the designer gets repeatable switching behaviour without trimming or external resistor selection.
Saturation voltage and DC gain — driving the load cleanly
At a base current of 500µA and collector current of 10mA, the Vce saturation is a maximum of 300mV, keeping conduction losses low in the on-state. Minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce confirms sufficient drive for typical logic-level loads. For a 100mA load, the 47kΩ base resistor limits base drive to roughly 60µA from a 3.3V logic rail, so the part is best suited to loads well below its 100mA maximum where the pre-biased ratio delivers a saturated switch.
Last Buy — sourcing this part today
Infineon has placed the BCR198SH6827XTSA1 in Last Buy status. This means the manufacturer has announced a final production window; after that date, no further factory orders are accepted.