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BCR198SH6327XTSA1

Infineon BCR198SH6327XTSA1 dual PNP pre-biased transistor

MPNBCR198SH6327XTSA1
NRND

Infineon BCR198SH6327XTSA1, dual PNP pre-biased transistor, 50 V Vce, 100 mA Ic, 190 MHz ft, 47 kΩ base and emitter-base resistors, SOT-363 surface-mount package, NRND lifecycle.

$0.0848Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR198SH6327XTSA1 specifications
ParameterValue
MountingSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250mW
Frequency - transition190MHz
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)47kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

What this dual PNP pre-biased transistor actually is

The Infineon BCR198SH6327XTSA1 is a dual PNP transistor with integrated bias resistors — each transistor has a 47 kΩ resistor in series with the base and a 47 kΩ resistor from base to emitter. That means you get two complete switching stages in one SOT-363 package with no external resistors needed for the bias network. It is designed for low-current switching and interface applications where you want to pull a node low or drive a small load from a microcontroller output.

The collector-emitter breakdown is rated at 50 V. Collector current is 100 mA maximum.

Lifecycle reality — NRND means plan your next move

Frequently asked questions

Is BCR198SH6327XTSA1 obsolete or still available?

It can still be sourced for existing production through independent distribution. Submit an RFQ for current availability.

Where can I buy BCR198SH6327XTSA1 with stock?

Submit a request for quote and we will confirm availability and current pricing.