The Infineon BCR198SE6327BTSA1 packs two matched PNP transistors with integrated 47kΩ base-to-emitter and base-to-emitter resistors into a single PG-SOT363-PO package. Each transistor is rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a 250 mW total power ceiling for the dual device. The built-in bias network eliminates two external resistors per channel, shrinking the footprint for low-current switching, level shifting, and interface pull-up/down duties in compact designs.
With a 190 MHz fT, this array handles switching up into the low-VHF range, suitable for signal conditioning, oscillator buffers, and fast logic-level translation where a single discrete transistor would need extra passives. The 300 mV saturation voltage at 500 µA base current and 10 mA collector current keeps on-state losses low in battery-powered or low-headroom rails.
Infineon has marked the BCR198SE6327BTSA1 as obsolete. For a new design, a pin-compatible dual pre-biased PNP array from the same or alternate vendor should be evaluated; the SOT-363 footprint is widely used across Infineon's BCR series and competitor equivalents.