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Infineon Technologies BCR198E6433HTMA1 — Discrete Semiconductors

Infineon BCR198E6433HTMA1 PNP Pre-Biased Transistor, 50 V

MPNBCR198E6433HTMA1
Last Buy

Infineon BCR198E6433HTMA1, PNP - Pre-Biased, 50 V VCEO, 100 mA IC, 47 kOhm R1/R2, 190 MHz fT, SOT-23-3, PG-SOT23, 200 mW.

$0.0474Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR198E6433HTMA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max200 mW
Frequency190 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)47 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

The Infineon BCR198E6433HTMA1 is a PNP pre-biased transistor in a SOT-23-3 surface-mount package. It integrates two 47 kOhm resistors — one in series with the base (R1) and one between base and emitter (R2) — which eliminates the need for external bias resistors in switching and driver circuits. With a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA, it is suited for low-power switching in industrial controls, relay drivers, and logic-level interface stages where board space is tight.

Last Buy status — plan your final order

The BCR198E6433HTMA1 carries a Last Buy lifecycle status. For new designs or long-running production, a pin-compatible second source or substitution should be qualified now.

200 mW power limit — what it drives in the layout

The maximum power dissipation of 200 mW sets the thermal budget. In a SOT-23 package without an exposed pad, this limits continuous collector current at elevated ambient temperatures. For a 10 mA load with a 300 mV Vce(sat), dissipation is only 3 mW, leaving ample headroom. But if the part is used near its 100 mA peak, duty cycle and ambient temperature must be derated — the 200 mW ceiling governs the safe operating area more than the current rating alone.

Frequently asked questions

Is BCR198E6433HTMA1 obsolete?

The BCR198E6433HTMA1 is in Last Buy status, meaning Infineon is ending production. It is not yet fully obsolete, but the final purchasing window is open. Plan for a last-time buy or qualify an alternative before the cut-off.

What is the replacement or equivalent for BCR198E6433HTMA1?

No official successor is listed by Infineon. For a pin-compatible alternative, look for a PNP pre-biased transistor in SOT-23 with 47 kOhm R1 and R2, 50 V VCEO, and 100 mA IC rating. Several manufacturers offer functionally equivalent parts — confirm the pinout and bias resistor values before substituting.

What are the specifications of BCR198E6433HTMA1?

Key specs: PNP pre-biased transistor, 50 V VCEO, 100 mA IC, 47 kOhm base resistor (R1), 47 kOhm base-emitter resistor (R2), 190 MHz transition frequency, 200 mW max power, SOT-23-3 package (PG-SOT23). Vce(sat) is 300 mV at 500 µA base current and 10 mA collector current. DC current gain (hFE) minimum is 70 at 5 mA, 5 V.