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Infineon Technologies BCR198E6393HTSA1 — Discrete Semiconductors
Infineon Technologies

BCR198E6393HTSA1 Infineon PNP Pre-Biased Transistor

MPNBCR198E6393HTSA1
Last Buy

Infineon BCR198E6393HTSA1 PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 47 kΩ base and emitter-base resistors, 190 MHz transition frequency, AEC-Q101 qualified, PG-SOT23 package.

BCR198E6393HTSA1 datasheet
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MOQ1 pcs
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Specifications

BCR198E6393HTSA1 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max200 mW
Frequency190 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)47 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

PNP pre-biased transistor with integrated 47 kΩ resistors

The Infineon BCR198E6393HTSA1 is a PNP pre-biased transistor in a PG-SOT23 surface-mount package, integrating two 47 kΩ resistors — one in series with the base (R1) and one between base and emitter (R2). This eliminates the need for external bias components in switching and driver stages, saving board area and reducing BOM count. It is rated for a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, with a transition frequency of 190 MHz. The device carries AEC-Q101 qualification, making it suitable for automotive and other high-reliability environments where temperature cycling and vibration are factors.

Last Buy — plan your final order window

The BCR198E6393HTSA1 carries a Last Buy lifecycle status. This means Infineon has scheduled end-of-production, and the remaining stock in the distribution channel is the final available inventory. If this part is qualified into an active design, secure your lifetime buy quantities now to avoid a forced requalification later.

The 47 kΩ base resistor (R1) sets the base drive for a given input voltage, so the transistor saturates predictably without an external resistor. The 47 kΩ emitter-base resistor (R2) provides a defined off-state, pulling the base to emitter potential when the drive is removed, which improves noise immunity. With a minimum DC current gain of 70 at 5 mA collector current and 5 V VCE, the device can switch loads up to 100 mA with a modest base drive. The 300 mV saturation voltage at 500 µA base current and 10 mA collector current keeps conduction losses low in logic-level switching applications.

Frequently asked questions

Is BCR198E6393HTSA1 obsolete?

The BCR198E6393HTSA1 is not yet obsolete but has been placed in Last Buy status by Infineon. This means production is ending, and the remaining inventory in the supply chain represents the final available stock. If you need this part for production or repair, it should be sourced promptly to avoid a supply gap.

What are the specifications of BCR198E6393HTSA1?

The BCR198E6393HTSA1 is a PNP pre-biased transistor with 50 V collector-emitter breakdown voltage, 100 mA maximum collector current, 190 MHz transition frequency, and integrated 47 kΩ base and emitter-base resistors. It comes in a PG-SOT23 surface-mount package, dissipates up to 200 mW, and is qualified to AEC-Q101 for automotive applications. The DC current gain is minimum 70 at 5 mA collector current and 5 V VCE, and saturation voltage is 300 mV maximum at 500 µA base current and 10 mA collector current.