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Infineon Technologies BCR196WH6327 — Discrete Semiconductors

Infineon BCR196WH6327 PNP Pre-Biased Transistor, 70 mA, 50 V

MPNBCR196WH6327
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Infineon BCR196WH6327 PNP pre-biased transistor, SC-70 (SOT-323) surface-mount package, 70 mA max collector current, 50 V Vce breakdown, 250 mW power dissipation, 150 MHz transition frequency.

$0.0400Ref. price · indicative, final on quote
Infineon Technologies BCR196WH6327 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR196WH6327 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)70 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce50 @ 5mA, 5V
Power - max250 mW
Frequency - transition150 MHz
PackageBulk
CaseSC-70, SOT-323
Resistor - base (R1)47 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased PNP for tight spaces

The Infineon BCR196WH6327 is a PNP pre-biased transistor that integrates two bias resistors — 47 kOhms base (R1) and 22 kOhms emitter-base (R2) — inside a single SC-70 (SOT-323) package. That means you skip the two external resistors a standard transistor would need, saving board area and placement cost on high-density boards.

Switching envelope — 70 mA, 50 V

Rated for 70 mA continuous collector current and a 50 V collector-emitter breakdown, this part handles relay coils, small solenoid drivers, and logic-level load switching. The 250 mW power ceiling in the SOT-323 package means it is a light-load device — keep the dissipation budget tight.

Frequently asked questions

What is the maximum collector current of BCR196WH6327?

The maximum continuous collector current (Ic) is 70 mA. This sets the upper limit for load current in switching applications like relay or LED drivers.