PNP pre-biased transistor in a compact SOT-323 footprint
The Infineon BCR196WE6327HTSA1 is a PNP pre-biased transistor — a digital transistor with two integrated bias resistors that eliminates the need for external base and emitter-base resistors in switching applications. It integrates a 47 kOhm base resistor (R1) and a 22 kOhm emitter-base resistor (R2), setting a predictable turn-on threshold for the downstream load.
Key ratings and switching ceiling
Collector-to-emitter breakdown voltage is 50 V, with a maximum continuous collector current of 70 mA and a power dissipation ceiling of 250 mW. The 150 MHz transition frequency means this part can handle general-purpose switching and low-frequency inverter stages up to a few megahertz before gain roll-off limits performance. DC current gain (hFE) is a minimum of 50 at 5 mA, 5 V, and saturation voltage at 10 mA is 300 mV typical — a clean on-state drop for a 5 V logic interface.
Obsolete — sourcing through independent distribution
This part carries an Obsolete lifecycle status from the manufacturer. No official successor or cross-reference is recorded in the product line. The compact SC-70 / SOT-323 package (supplier device package PG-SOT323) is the footprint to match on the existing board.
