PNP pre-biased transistor with integrated bias resistors
The Infineon BCR196E6327HTSA1 is a PNP pre-biased transistor in a SOT-23-3 surface-mount package. It integrates a 47 kΩ base resistor (R1) and a 22 kΩ emitter-base resistor (R2), eliminating the need for external bias components in digital switching and driver circuits. Rated for a collector-emitter breakdown voltage of 50 V and a maximum collector current of 70 mA, it suits low-power switching loads such as relay and LED drivers, logic-level translators, and interface circuits in industrial and consumer electronics.
Last-time-buy — sourcing action required
This part carries a Last Buy lifecycle status, meaning Infineon has scheduled its end of production. Buyers with active BOM lines should secure final-order quantities through independent distribution channels.
Key ratings for design fit
The 150 MHz transition frequency (fT) gives enough bandwidth for switching applications up to several megahertz. VCE(sat) is specified at 300 mV maximum at 500 µA base current and 10 mA collector current, which keeps conduction losses low in saturated switching. DC current gain (hFE) is a minimum of 50 at 5 mA, 5 V, providing consistent drive capability across the operating range. Maximum power dissipation is 200 mW, so thermal derating is needed for continuous operation above 70 mA or at elevated ambient temperatures.