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Infineon Technologies BCR196E6327 — Discrete Semiconductors

Infineon BCR196E6327 PNP Pre-Biased Transistor, 50V, 70mA

MPNBCR196E6327
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Infineon BCR196E6327 PNP pre-biased transistor, 50V Vce, 70mA Ic, 150MHz fT, R1=47kΩ, R2=22kΩ, PG-SOT23-3-11 package, Bulk.

$0.0300Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

BCR196E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)70 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce50 @ 5mA, 5V
Power - max200 mW
Frequency150 MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)47 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased PNP — one less pass on the BOM

The Infineon BCR196E6327 is a PNP pre-biased transistor in a SOT-23-3 package. It integrates a 47 kOhm base resistor (R1) and a 22 kOhm emitter-base resistor (R2), which means the designer skips two discrete passives per switching node. This part is used in digital switching, level shifting, and relay or LED driver circuits where the load current stays under 70 mA and the rail is 50 V or less.

50 V collector rating — 24 V industrial logic is comfortable

The 50 V Vce breakdown gives headroom for 24 V PLC outputs, automotive 12 V loads with inductive kickback margin, and general-purpose 5 V or 3.3 V logic translation. The 70 mA continuous collector current covers small relays, optocoupler inputs, and indicator LEDs without breaking a sweat.

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