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Infineon Technologies BCR192WE6327HTSA1 — Discrete Semiconductors

BCR192WE6327HTSA1 PNP Pre-Biased Transistor, 50V, 100mA

MPNBCR192WE6327HTSA1
Obsolete

Infineon BCR192WE6327HTSA1 PNP pre-biased digital transistor, 50 V collector-emitter breakdown, 100 mA collector current, 200 MHz transition frequency, SC-70/SOT-323 package.

Infineon Technologies BCR192WE6327HTSA1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR192WE6327HTSA1 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency - transition200 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)22 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

What this PNP pre-biased transistor does

It integrates a 22 kOhm base resistor (R1) and a 47 kOhm emitter-base resistor (R2), eliminating two external passives from the BOM. This is a digital transistor intended for switching and interface loads where the base drive is supplied directly from a logic output or microcontroller pin.

Collector-emitter breakdown is rated at 50 V, with a maximum collector current of 100 mA.

Lifecycle status — obsolete, but available through independent distribution

Infineon lists the BCR192WE6327HTSA1 as Obsolete. For new designs, consider a current-production PNP pre-biased transistor in the same SC-70 footprint with comparable resistor values.

Frequently asked questions

What package is BCR192WE6327HTSA1?

The BCR192WE6327HTSA1 is supplied in a SC-70 (SOT-323) surface-mount package, supplier device package PG-SOT323. It ships in Tape & Reel (TR).