PNP pre-biased transistor with matched 22 kΩ resistors
The Infineon BCR191E6327HTSA1 is a PNP pre-biased transistor in a SOT-23 package, integrating two 22 kΩ resistors — one in series with the base, one from base to emitter. This built-in bias network eliminates two external resistors from the BOM, saving board space and reducing component count in switching and driver stages. The transistor is rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a transition frequency of 200 MHz. Typical applications include low-power switching, relay and LED drivers, and interface circuits where a single PNP switch with a defined on/off threshold is needed.
200 mW power dissipation in SOT-23
With a maximum power dissipation of 200 mW, this transistor is sized for signal-level loads rather than power-stage duty. The SOT-23 footprint (PG-SOT23 supplier package) keeps the thermal path short; for continuous operation near the 100 mA collector current limit, derating is required above 25 °C ambient. The low Vce(sat) of 300 mV at 500 µA base current and 10 mA collector current means minimal voltage drop in the on-state, which helps maintain output voltage headroom in low-voltage designs.
NRND — plan for a last-time buy or alternate
Buyers should evaluate a pin-compatible PNP pre-biased transistor in the same SOT-23 package for long-term supply continuity.