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Infineon Technologies BCR191E6327HTSA1 — Discrete Semiconductors

Infineon BCR191E6327HTSA1 PNP Pre-Biased Transistor, 200 MHz

MPNBCR191E6327HTSA1
NRND

Infineon BCR191E6327HTSA1 PNP pre-biased transistor, 50 V Vce, 100 mA Ic, 200 MHz ft, 22 kΩ base and emitter resistors, SOT-23 package, 200 mW power dissipation.

$0.0431Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR191E6327HTSA1 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce50 @ 5mA, 5V
Power - max200 mW
Frequency - transition200 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)22 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

PNP pre-biased transistor with matched 22 kΩ resistors

This built-in bias network eliminates two external resistors from the BOM, saving board space and reducing component count in switching and driver stages. Typical applications include low-power switching, relay and LED drivers, and interface circuits where a single PNP switch with a defined on/off threshold is needed.

200 mW power dissipation in SOT-23

The SOT-23 footprint (PG-SOT23 supplier package) keeps the thermal path short; for continuous operation near the 100 mA collector current limit, derating is required above 25 °C ambient. The low Vce(sat) of 300 mV at 500 µA base current and 10 mA collector current means minimal voltage drop in the on-state, which helps maintain output voltage headroom in low-voltage designs.

NRND — plan for a last-time buy or alternate

Buyers should evaluate a pin-compatible PNP pre-biased transistor in the same SOT-23 package for long-term supply continuity.

Frequently asked questions

Is BCR191E6327HTSA1 obsolete?

It is not formally discontinued, but it is not recommended for new designs. Existing production can still be sourced through independent channels.

What is the replacement for BCR191E6327HTSA1?

For new designs, evaluate a current-production PNP pre-biased transistor in SOT-23 with matched 22 kΩ resistors from Infineon's BCR series or a comparable family.

What are the specifications of BCR191E6327HTSA1?

The BCR191E6327HTSA1 is a PNP pre-biased transistor with 50 V Vce breakdown, 100 mA Ic(max), 200 MHz transition frequency, 200 mW power dissipation, and integrated 22 kΩ base and emitter resistors. It comes in a SOT-23 surface-mount package.