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Infineon Technologies BCR191E6327 — Discrete Semiconductors

Infineon BCR191E6327 PNP Pre-Biased Transistor, AEC-Q101

MPNBCR191E6327
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Infineon BCR191E6327 PNP pre-biased transistor, Automotive AEC-Q101 series, 50 V Vceo, 100 mA Ic, 200 mW, 200 MHz ft, SOT-23-3 package.

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Specifications

BCR191E6327 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce50 @ 5mA, 5V
Power - max200 mW
Frequency200 MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)22 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased PNP for automotive switching

The Infineon BCR191E6327 is a PNP pre-biased transistor in the Automotive AEC-Q101 series, qualified for use in automotive electronics including under-hood and chassis-domain circuits. It integrates two 22 kΩ resistors — one in series with the base (R1) and one between base and emitter (R2) — which eliminates the need for external bias resistors in digital switching and driver stages. Rated for a collector current of 100 mA and a collector-emitter breakdown voltage of 50 V, with a maximum power dissipation of 200 mW. The transition frequency of 200 MHz supports switching applications up to the low-MHz range, such as relay drivers, solenoid drivers, and logic-level translators. The SOT-23-3 package (PG-SOT23-3-1) is a standard surface-mount footprint, suitable for automated assembly and space-constrained PCB layouts.

Selection check: current, voltage, and saturation

The 100 mA collector current rating sets the load ceiling — if the driven relay or solenoid coil draws more than 80 mA continuous, budget for derating or step up to a higher-current device. The 50 V Vceo covers 12 V and 24 V automotive rails with margin, but verify against load-dump transients if the transistor is directly exposed to the battery line. DC current gain (hFE) is a minimum of 50 at 5 mA collector current and 5 V Vce. This is typical for a pre-biased transistor and sufficient to saturate the device with a 500 µA base drive from a microcontroller GPIO or logic gate.

Automotive qualification and lifecycle

This qualification covers temperature cycling, high-temperature reverse bias, and other reliability tests required for production vehicle electronics.

Frequently asked questions

Is BCR191E6327 suitable for automotive applications?

Yes, the BCR191E6327 is part of Infineon's Automotive AEC-Q101 series, which means it is qualified to the AEC-Q101 stress test standard for discrete semiconductors used in automotive electronics, including under-hood and chassis-domain circuits.