Infineon BCR185SH6327, dual PNP pre-biased transistor, 50 V VCEO, 100 mA Ic, 250 mW, SOT-363 package, active lifecycle.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | 2 PNP - Pre-Biased (Dual) |
| Voltage - collector emitter breakdown | 50V |
| Current - collector (Ic) | 100mA |
| DC current gain (hFE) (Min) @ ic, vce | 70 @ 5mA, 5V |
| Power - max | 250mW |
| Frequency - transition | 200MHz |
| Package | Bulk |
| Case | 6-VSSOP, SC-88, SOT-363 |
| Resistor - base (R1) | 10kOhms |
| Resistor - emitter base (R2) | 47kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 500µA, 10mA |
The Infineon BCR185SH6327 is a dual PNP pre-biased transistor in a single SOT-363 package. Each transistor integrates a 10 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), so you don't need external bias resistors on the board. The 250 mW power limit means you keep the total dissipation across both transistors under that ceiling — derate if both channels run near 100 mA simultaneously.
It is a current Infineon catalog item in the SOT-363 package.
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