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Infineon Technologies BCR185SH6327 — Discrete Semiconductors

Infineon BCR185SH6327 Dual Pre-Biased PNP, 50 V, 100 mA

MPNBCR185SH6327
Active

Infineon BCR185SH6327, dual PNP pre-biased transistor, 50 V VCEO, 100 mA Ic, 250 mW, SOT-363 package, active lifecycle.

$0.0600Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR185SH6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250mW
Frequency200MHz
PackageBulk
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

The Infineon BCR185SH6327 is a dual PNP pre-biased transistor in a single SOT-363 package. Each transistor integrates a 10 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), so you don't need external bias resistors on the board. This is the part you reach for when you want to switch two low-side loads or drive a pair of LEDs from a microcontroller output without populating extra passives. The 50 V collector-emitter breakdown and 100 mA continuous collector current cover typical 12 V and 24 V industrial logic-level switching. The 250 mW power limit means you keep the total dissipation across both transistors under that ceiling — derate if both channels run near 100 mA simultaneously.

Active production — no obsolescence worry

It is a current Infineon catalog item in the SOT-363 package.

Frequently asked questions

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