Infineon BCR185E6433HTMA1, PNP - Pre-Biased, 50 V VCEO, 100 mA IC, 200 mW, 200 MHz, 10 kOhms R1, 47 kOhms R2, PG-SOT23, Tape & Reel.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | PNP - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 70 @ 5mA, 5V |
| Power - max | 200 mW |
| Frequency - transition | 200 MHz |
| Package | Tape & Reel (TR) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Resistor - base (R1) | 10 kOhms |
| Resistor - emitter base (R2) | 47 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 500µA, 10mA |
It integrates a 10 kOhm base resistor (R1) and a 47 kOhm emitter-base resistor (R2), eliminating two external components on the board. With a transition frequency of 200 MHz, it handles switching applications well into the low-MHz range. Typical uses include inverter and interface circuits, relay and LED drivers, and general-purpose switching in consumer and industrial equipment where a single PNP switch with built-in bias is needed.
Infineon has not published an official successor order code for the BCR185E6433HTMA1. A drop-in replacement must be a PNP pre-biased transistor in SOT-23 with a 10 kOhm base resistor and 47 kOhm emitter-base resistor, rated for at least 50 V and 100 mA. The BCR185 base product number covers multiple variants; verify the resistor ratio and package match before substituting.
The maximum power dissipation is 200 mW.