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Infineon Technologies BCR185E6433HTMA1 — Discrete Semiconductors
Infineon Technologies

BCR185E6433HTMA1 PNP Pre-Biased Transistor, 50 V, 100 mA

MPNBCR185E6433HTMA1
Obsolete

Infineon BCR185E6433HTMA1, PNP - Pre-Biased, 50 V VCEO, 100 mA IC, 200 mW, 200 MHz, 10 kOhms R1, 47 kOhms R2, PG-SOT23, Tape & Reel.

$0.0474Ref. price · indicative, final on quote
BCR185E6433HTMA1 datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR185E6433HTMA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max200 mW
Frequency200 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

PNP pre-biased transistor — 50 V, 100 mA, 200 MHz

The Infineon BCR185E6433HTMA1 is a PNP pre-biased digital transistor in a PG-SOT23 package. It integrates a 10 kOhm base resistor (R1) and a 47 kOhm emitter-base resistor (R2), eliminating two external components on the board. The part is rated for 50 V collector-emitter breakdown, 100 mA continuous collector current, and 200 mW maximum power dissipation. With a transition frequency of 200 MHz, it handles switching applications well into the low-MHz range. Typical uses include inverter and interface circuits, relay and LED drivers, and general-purpose switching in consumer and industrial equipment where a single PNP switch with built-in bias is needed.

Obsolete — sourcing through independent distribution

The BCR185E6433HTMA1 carries an obsolete lifecycle status.

Frequently asked questions

What is the replacement for BCR185E6433HTMA1?

Infineon has not published an official successor order code for the BCR185E6433HTMA1. A drop-in replacement must be a PNP pre-biased transistor in SOT-23 with a 10 kOhm base resistor and 47 kOhm emitter-base resistor, rated for at least 50 V and 100 mA. The BCR185 base product number covers multiple variants; verify the resistor ratio and package match before substituting.

What is the power rating of BCR185E6433HTMA1?

The maximum power dissipation is 200 mW.