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Infineon Technologies BCR185E6327HTSA1 — Discrete Semiconductors
Infineon Technologies

Infineon BCR185E6327HTSA1 PNP Pre-Biased Transistor, 50V

MPNBCR185E6327HTSA1
NRND

Infineon BCR185E6327HTSA1, PNP - Pre-Biased, 50V VCEO, 100mA Ic, 200mW, 200MHz ft, R1=10kΩ, R2=47kΩ, SOT-23-3, PG-SOT23.

$0.0431Ref. price · indicative, final on quote
BCR185E6327HTSA1 datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR185E6327HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max200 mW
Frequency200 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased PNP — what the integrated resistors buy you

The Infineon BCR185E6327HTSA1 is a PNP pre-biased transistor in a SOT-23-3 package (PG-SOT23). It integrates two bias resistors — a 10 kOhms base resistor (R1) and a 47 kOhms emitter-base resistor (R2) — so you can drive the base directly from a 3.3V or 5V logic output without external resistors. That saves two components per channel on the BOM and shrinks the placement cost.

NRND — plan the last-time-buy now

If you have an existing BOM line using the BCR185E6327HTSA1, you need to secure enough inventory for your remaining production runs or qualify a replacement before the last-time-buy window closes. For new designs, look at the active BCR185 series siblings or a pin-compatible pre-biased PNP.

Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current. Maximum power dissipation is 200 mW.

Saturation voltage matters for the on-state drop

Vce(sat) is specified at 300 mV maximum with 500 µA base current and 10 mA collector current.

Frequently asked questions

Is BCR185E6327HTSA1 obsolete?

It is not fully discontinued, but Infineon no longer recommends it for new designs. Existing production can continue while supply lasts, but plan a last-time-buy or identify a replacement for future builds.

What are the R1 and R2 values for BCR185E6327HTSA1?

The base resistor (R1) is 10 kOhms and the emitter-base resistor (R2) is 47 kOhms. These integrated resistors set the base drive current and ensure the transistor turns off cleanly when the input is high-impedance or grounded.