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Infineon Technologies BCR183WH6327 — Discrete Semiconductors

BCR183WH6327 PNP Pre-Biased Transistor, 100 mA, 50 V

MPNBCR183WH6327
Active

Infineon BCR183WH6327, PNP Pre-Biased, 100 mA Ic, 50 V Vce, 200 MHz ft, SC-70/SOT-323, 250 mW, Surface Mount.

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MOQ1 pcs
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Specifications

BCR183WH6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250 mW
Frequency200 MHz
PackageBulk
CaseSC-70, SOT-323
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

PNP pre-biased with integrated 10 kΩ resistors

The Infineon BCR183WH6327 is a PNP pre-biased digital transistor in a SOT-323 package. It integrates a 10 kΩ base resistor (R1) and a 10 kΩ emitter-base resistor (R2), so you can drive it directly from a logic output without adding external bias components. Collector current is rated at 100 mA continuous, with a collector-emitter breakdown of 50 V — enough for switching relays, small solenoids, or level-shifting in 24 V industrial logic.

200 MHz transition frequency — what it means for switching

A transition frequency of 200 MHz means this transistor can handle fast switching edges in low-current digital interfaces, like driving a MOSFET gate or a high-speed optocoupler. The pre-biased resistors keep the base drive consistent across temperature, which simplifies the BOM for a simple on/off load.

Frequently asked questions

What is the maximum collector current of BCR183WH6327?

The maximum continuous collector current (Ic) is 100 mA. Saturation voltage is 300 mV at 500 µA base current and 10 mA collector current, so it stays cool in light switching loads.

Is BCR183WH6327 obsolete?

No — it is listed as active.