Skip to main content
Infineon Technologies BCR183WE6327HTSA1 — Discrete Semiconductors
Infineon Technologies

Infineon BCR183WE6327HTSA1 PNP Pre-Biased Transistor, SC-70

MPNBCR183WE6327HTSA1
Obsolete

Infineon BCR183WE6327HTSA1 PNP pre-biased transistor, 50 V VCEO, 100 mA IC, 200 MHz fT, dual 10 kOhm bias resistors, SC-70 SOT-323 package, surface mount.

BCR183WE6327HTSA1 datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR183WE6327HTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250 mW
Frequency200 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased PNP for space-constrained switching

The Infineon BCR183WE6327HTSA1 is a PNP pre-biased digital transistor in a SC-70 (SOT-323) package, integrating two 10 kOhm resistors — one in the base leg and one between base and emitter — so it switches directly from a logic output without external bias components. Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a transition frequency of 200 MHz, it handles low-power switching up to medium-speed loads in dense PCB layouts.

This part carries an Obsolete lifecycle status, meaning Infineon has ended production.

SOT-323 footprint and power handling

Housed in a PG-SOT323 (SC-70) package, the BCR183WE6327HTSA1 dissipates up to 250 mW. The small footprint suits handheld and portable gear where board area is tight, but the power limit means the transistor is best used for signal-level switching rather than driving loads near the 100 mA ceiling continuously.

Frequently asked questions

What is the replacement for BCR183WE6327HTSA1?

For an existing BOM, the closest functional match would be another PNP pre-biased transistor in the same BCR183 family with dual 10 kOhm resistors and a SC-70 package, but pin compatibility and electrical ratings must be verified against the original design. Sourcing the original part through independent channels remains an option while stock lasts.

What are the specifications of BCR183WE6327HTSA1?

It is a PNP pre-biased transistor with 50 V VCEO, 100 mA IC max, 200 MHz transition frequency, dual 10 kOhm resistors (base and base-emitter), VCE sat of 300 mV at 500 µA base and 10 mA collector, minimum hFE of 30 at 5 mA and 5 V, and maximum collector cutoff current of 100 nA. It comes in a SC-70 SOT-323 package rated for 250 mW power dissipation.