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Infineon Technologies BCR183WE6327 — Discrete Semiconductors

BCR183WE6327 PNP Pre-Biased Transistor, 100 mA, 50 V

MPNBCR183WE6327
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Infineon BCR183WE6327 PNP pre-biased transistor, 100 mA collector current, 50 V Vce, 200 MHz transition frequency, 10 kOhm base and emitter resistors, SC-70/SOT-323 package, surface mount.

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Specifications

BCR183WE6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250 mW
Frequency200 MHz
PackageBulk
CaseSC-70, SOT-323
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

What this PNP pre-biased transistor does for your board

The Infineon BCR183WE6327 is a PNP pre-biased transistor — meaning the bias resistors are integrated into the same SOT-323 package, so you skip the two external resistors you would normally need for a common-emitter switch. The base resistor (R1) and the emitter-base resistor (R2) are both 10 kOhms, which sets a predictable on-threshold and provides a built-in pull-down to keep the transistor off when the drive signal is floating. With a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V, it handles typical low-side switching loads like relays, LEDs, or small solenoids in 5 V or 12 V systems.

200 MHz transition frequency — what it buys you

The 200 MHz transition frequency (fT) means the transistor can switch at moderate speeds — think PWM dimming of an LED at tens of kilohertz, or toggling a small signal relay without noticeable delay. It is not a high-speed logic-level switch, but for the 100 mA collector current range the fT is more than adequate for most control loops and indicator drivers.

Package and footprint: SOT-323

Housed in a SC-70 / SOT-323 case (Infineon calls it PG-SOT323-3-1), this is a three-lead surface-mount package with a 1.3 mm pitch. The small footprint saves board area compared to a SOT-23, but the power dissipation is limited to 250 mW — so you need to keep the product of Vce and Ic below that ceiling in continuous operation. For a 100 mA load at 2.5 V Vce you are at 250 mW, right at the limit; derate if ambient temperature climbs above 25 °C.

Frequently asked questions

What is the maximum collector current of BCR183WE6327?

The maximum continuous collector current (Ic) is 100 mA. The collector-emitter breakdown voltage is 50 V, and the total power dissipation is 250 mW.

What is the base resistor value in BCR183WE6327?

Both the base resistor (R1) and the emitter-base resistor (R2) are 10 kOhms.

What is the closest pin-compatible alternative to BCR183WE6327?

Within the same Infineon BCRxxx family, parts with different resistor ratios (e.g., BCR108W with 2.2 kOhm / 47 kOhm) are pin-compatible in the SOT-323 package — but the resistor values change the on-threshold and drive requirements, so verify the base drive circuit before substituting.