The Infineon BCR183SH6327XTSA1 is a dual PNP pre-biased transistor in a PG-SOT363-PO package. Each transistor integrates two 10kΩ resistors — one in series with the base (R1) and one between base and emitter (R2) — so the part switches directly from a logic output without external bias components. Collector-to-emitter breakdown is rated at 50V, and continuous collector current is 100mA per transistor, with a transition frequency of 200MHz. The dual configuration in a single SOT-363 footprint suits high-density boards where two independent low-side switches or signal inverters are needed — think relay drivers, LED matrix column sinks, or level translators in industrial control I/O modules. The 250mW total power limit governs the combined dissipation across both transistors.
50V breakdown, 100mA collector current — load budget reality
The 50V VCEO rating covers 24V industrial rails and 48V telecom supplies with margin. The 100mA Ic ceiling per transistor handles small relays, optocoupler LEDs, and logic-level loads — not solenoids or motors. Saturation voltage is 300mV at 500µA base drive and 10mA collector current, so the on-state drop stays low enough for 3.3V and 5V logic interfaces. Minimum DC current gain of 30 at 5mA, 5V means the base drive requirement is predictable across the operating range. The 200MHz transition frequency is fast enough for PWM switching up to several hundred kilohertz, though the pre-biased resistors limit switching speed compared to an unbias transistor pair.
Obsolete — sourcing and replacement path
The BCR183SH6327XTSA1 carries an Obsolete lifecycle status. Infineon has discontinued this specific variant, so new-production orders through franchised channels are no longer available. For a pin-compatible drop-in, the closest candidate is another member of Infineon's BCR183 family in the same PG-SOT363-PO package with identical 10kΩ resistor values. No official Infineon successor part number is recorded for this obsolete code.