Dual PNP pre-biased transistor in SOT-363
The Infineon BCR183SE6433BTMA1 is a dual PNP pre-biased transistor in a 6-pin SOT-363 package. Each transistor integrates two 10 kΩ resistors (R1 and R2), eliminating the need for external bias components in switching and driver circuits. With a 200 MHz transition frequency, 50 V collector-emitter breakdown, and 100 mA collector current rating, it suits low-power switching, level shifting, and relay or LED driver stages in industrial and consumer electronics.
This part carries an official lifecycle status of Obsolete.
Key ratings for the repair bench
The 250 mW power dissipation limit sets the thermal budget — in a SOT-363 with no exposed pad, keep the ambient derating in mind if both transistors conduct simultaneously. The Vce saturation of 300 mV at 500 µA base and 10 mA collector is tight enough for 3.3 V logic-level interfaces without a separate driver stage. The 30 minimum hFE at 5 mA, 5 V confirms it drives well into saturation for low-side switching.