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Infineon Technologies BCR183SE6327BTSA1 — Discrete Semiconductors

Infineon BCR183SE6327BTSA1 Dual PNP Pre-Biased Transistor

MPNBCR183SE6327BTSA1
Obsolete

Infineon BCR183SE6327BTSA1 dual PNP pre-biased transistor, 50V collector-emitter breakdown, 100mA max collector current, 10kΩ base and base-emitter resistors, SOT-363 surface-mount package.

$0.2900Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR183SE6327BTSA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250mW
Frequency200MHz
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)10kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

The Infineon BCR183SE6327BTSA1 is a dual PNP pre-biased transistor in a SOT-363 package, integrating two matched PNP transistors each with built-in 10kΩ base and base-emitter resistors. The 50V collector-emitter breakdown voltage and 100mA maximum collector current define the switching and load-driving envelope for low-side relay drivers, LED indicators, and logic-level interface circuits where you want to eliminate external bias resistors and shrink the PCB footprint. The 200MHz transition frequency keeps switching edges clean for sub-1MHz PWM or digital signalling.

The BCR183SE6327BTSA1 carries an obsolete product status. Infineon no longer manufactures this specific variant, so new-production orders are not available through the franchised channel.

Built-in bias resistors — one less component per channel

Each of the two PNP transistors integrates a 10kΩ resistor in series with the base and a 10kΩ resistor between base and emitter. This pre-biased configuration saves two external resistors per channel — four resistors total for the dual pair — and guarantees a known base drive condition without a separate bias network. For a high-density board running at 5V or 3.3V logic, that reduction in component count directly frees up placement space and simplifies the BOM.

Frequently asked questions

What is the replacement for BCR183SE6327BTSA1?

Infineon does not list a direct successor for this obsolete order code. For a new design, look at current-production dual PNP pre-biased transistors in SOT-363 with similar 50V VCEO and 100mA Ic ratings, such as the BCR183 series base part number — verify pin-compatibility and resistor values against your circuit.

What are the specifications of BCR183SE6327BTSA1?

It is a dual PNP pre-biased transistor with 50V collector-emitter breakdown voltage, 100mA maximum collector current, 10kΩ base and base-emitter resistors, 300mV Vce saturation at 500µA base and 10mA collector, minimum DC current gain of 30 at 5mA collector and 5V Vce, 200MHz transition frequency, and 250mW maximum power dissipation. Package is SOT-363 (6-VSSOP/SC-88).

Where can I buy BCR183SE6327BTSA1?

We source this obsolete part through independent distribution channels.