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Infineon Technologies BCR183S — Discrete Semiconductors

Infineon BCR183S dual PNP pre-biased transistor, 50 V

MPNBCR183S
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Infineon BCR183S, dual PNP pre-biased transistor, 50 V VCEO, 100 mA IC, 10k base and emitter resistors, 200 MHz transition frequency, SOT-23-3 package, bulk.

$0.0300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR183S specifications
ParameterValue
MountingSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250mW
Frequency - transition200MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)10kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Dual PNP pre-biased pair — one SOT-23, no external resistors

The Infineon BCR183S packs two PNP transistors with integrated bias resistors into a single SOT-23-3 package. Each transistor has a 10 kΩ base resistor (R1) and a 10 kΩ emitter-base resistor (R2), eliminating the need for external biasing components in switching and driver applications. Collector-emitter breakdown is rated at 50 V, and continuous collector current is 100 mA per transistor. Transition frequency is 200 MHz, adequate for low-speed switching up to a few megahertz.

Built-in resistors simplify layout and BOM

DC current gain is a minimum of 30 at 5 mA collector current and 5 V VCE.

Frequently asked questions

What is the difference between BCR183S and BCR183W?

The BCR183S and BCR183W are both dual PNP pre-biased transistors from Infineon with identical electrical specifications (50 V VCEO, 100 mA IC, 10k resistors). The difference is the package: BCR183S comes in the SOT-23-3 (PG-SOT23-3-11) package, while BCR183W uses the SOT-323 package, which is smaller and has a different pin spacing. They are not pin-compatible.