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Infineon Technologies BCR169WE6327HTSA1 — Discrete Semiconductors

BCR169WE6327HTSA1 PNP Pre-Biased Transistor, 50 V, 100 mA

MPNBCR169WE6327HTSA1
Obsolete

Infineon BCR169WE6327HTSA1 PNP pre-biased digital transistor, 50 V collector-emitter breakdown, 100 mA collector current, 200 MHz transition frequency, SC-70/SOT-323 package.

$0.2500Ref. price · indicative, final on quote
Infineon Technologies BCR169WE6327HTSA1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR169WE6327HTSA1 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max250 mW
Frequency - transition200 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

It integrates bias resistors (4.7 kOhms base resistor R1) so the base drive network is built in, saving two external resistors per transistor on the board.

50 V breakdown, 100 mA Ic — the switching envelope

The 50 V Vce(max) and 100 mA Ic(max) define the load it can switch: small relays, optocoupler LEDs, or a logic-level load on a 24 V industrial bus.

Infineon lists the BCR169WE6327HTSA1 as obsolete. Verify date-code provenance on any lots surfacing after the last-time-buy window; the SOT-323 package is common enough that a cross-ship from surplus stock is realistic, but counterfeit risk rises with age.

Frequently asked questions

Is BCR169WE6327HTSA1 obsolete?

Yes, Infineon lists the BCR169WE6327HTSA1 as obsolete.

What is the replacement for BCR169WE6327HTSA1?

No official replacement order code is listed by Infineon. A functionally similar PNP pre-biased transistor in SOT-323 with a 4.7 kOhms base resistor and 50 V / 100 mA rating may work, but pin compatibility and bias resistor values must be verified against the original design. The safest path is to source the original part through independent distribution.

What are the specifications of BCR169WE6327HTSA1?

It is a PNP pre-biased transistor with 50 V collector-emitter breakdown, 100 mA collector current, 200 MHz transition frequency, 4.7 kOhms base resistor, 250 mW maximum power dissipation, and a minimum DC current gain of 120 at 5 mA. It comes in a SC-70 / SOT-323 package for surface-mount assembly.