Skip to main content
Infineon Technologies BCR166 — Discrete Semiconductors

BCR166 PNP Pre-Biased Transistor, SC-70, 50 V, 100 mA

MPNBCR166
Active

Infineon BCR166, PNP - Pre-Biased, 50 V, 100 mA, 250 mW, 160 MHz, SC-70 SOT-323, Bulk.

StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BCR166 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency160 MHz
PackageBulk
CaseSC-70, SOT-323
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Integrated resistor network saves board space

The BCR166 is a PNP pre-biased transistor from Infineon in a SC-70 (SOT-323) surface-mount package. It integrates a 4.7 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), eliminating two external passives per switching node. This is the part you reach for when you need to drive a low-side load from a microcontroller GPIO without adding resistor pairs to the BOM.

Switching performance and saturation

Collector-emitter breakdown is rated at 50 V, with a maximum continuous collector current of 100 mA and total power dissipation of 250 mW. The 160 MHz transition frequency supports switching into the low-MHz range. Vce saturation is specified at 300 mV maximum with 500 µA base drive and 10 mA collector current — a clean on-state voltage for a 5 V or 3.3 V logic interface. Collector cutoff leakage is held to 100 nA (ICBO), important for battery-powered circuits where off-state current bleeds the rail.

DC gain and drive margin

Minimum DC current gain (hFE) is 70 at 5 mA collector current and 5 V Vce. With the integrated 4.7 kΩ base resistor, a 3.3 V logic output delivering about 0.7 mA base current gives enough drive headroom to saturate the transistor at collector currents up to roughly 50 mA. The 47 kΩ emitter-base resistor ensures the transistor is held off when the GPIO is tri-stated or high-impedance.

Package and marking verification

The BCR166 is supplied in the PG-SOT323-3-1 package (SC-70 / SOT-323 footprint). The supplier device package code is PG-SOT323-3-1. When inspecting incoming material, confirm the top-side laser marking matches Infineon's standard for this date-code lot.

Frequently asked questions

What is the Vce saturation of BCR166?

Vce saturation is specified at 300 mV maximum at a base current of 500 µA and collector current of 10 mA.

What is the closest pin-compatible alternative to BCR166?

Within Infineon's pre-biased transistor family, the BCR166 uses a 4.7 kΩ base resistor and 47 kΩ emitter-base resistor combination. A part with the same resistor values and package would be a direct functional equivalent; verify the specific internal resistor network matches your design's drive requirements before substituting.